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IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T
Low Loss IGBT in Trench and Fieldstop technology
* * * * * Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) P-TO-220-3-1 Low EMI (TO-220AB) Low Gate Charge Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600 V 600 V 600 V IC 50 A 50 A 50 A VCE(sat),Tj=25C 1.5 V 1.5 V 1.5 V Tj,max 175 C 175 C 175 C Marking Code G50T60 G50T60 G50T60 Package TO-220 TO-263 TO-247
C
G
E
P-TO-247-3-1 (TO-220AC)
* * * *
P-TO-263-3-2 (D-PAK) (TO-263AB)
Type IGP50N60T IGB50N60T IGW50N60T
Ordering Code Q67040S4723 Q67040S4721 Q67040S4725
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 600V, Tj 175C) Gate-emitter voltage Short circuit withstand time
1)
Symbol VCE IC
Value 600 100 50
Unit V A
ICpuls VGE tSC Ptot Tj Tstg -
150 150 20 5 333 -40...+175 -55...+175 260 V s W C
VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient RthJA TO-220-3-1 TO-247-3-1 TO-263-3-2 (6cm Cu) Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 0. 2mA VCE(sat) V G E = 15V, I C = 50A T j = 25 C T j = 17 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 8mA, V C E = V G E V C E = 600V , V G E = 0V T j = 25 C T j = 17 5 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E = 1 5V,t S C 5s V C C = 400V, T j 150 C 458.3 A Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 4 80V, I C = 50A V G E = 1 5V T O -247-3- 1 7 nH 3140 200 93 310 nC pF IGES gfs RGint V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 50A 31 40 1000 100 nA S 4.1 1.5 1.9 4.9 2.0 5.7 A 600 V Symbol Conditions Value min. Typ. max. Unit 62 40 40 RthJC 0.45 K/W Symbol Conditions Max. Value Unit
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 4 00V, I C = 50A, V G E = 0/ 1 5V , RG= 7 , L 1 ) = 103nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery.2) 26 29 299 29 1.2 1.4 2.6 mJ ns Symbol Conditions Value min. Typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 17 5 C, V C C = 4 00V, I C = 50A, V G E = 0/ 1 5V , RG= 7 L 1 ) = 103nH, C 1 ) =39pF Energy losses include "tail" and diode 2) reverse recovery. 27 33 341 55 1.8 1.8 3.6 mJ ns Symbol Conditions Value min. Typ. max. Unit
1) 2)
Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. Includes Reverse Recovery Losses from IKW50N60T due to dynamic test circuit in Figure E. 3 Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T
140A 120A
100A
t p=2s
IC, COLLECTOR CURRENT
100A 80A
T C =80C T C =110C
IC, COLLECTOR CURRENT
10s
10A
50s
60A 40A 20A 0A 100H z
Ic
1ms 1A DC 10ms
Ic
1kH z 10kH z 100kH z
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 7)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)
300W
80A
IC, COLLECTOR CURRENT
POWER DISSIPATION
250W 200W 150W 100W 50W 0W 25C
60A
40A
Ptot,
20A
50C
75C
100C 125C 150C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.2 Dec-04
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T
120A 100A 80A 60A 40A 20A 0A 0V 1V 2V 3V V GE =20V 15V 13V 11V 9V 7V
120A 100A 80A 60A 40A 20A 0A 0V 1V 2V 3V 4V V GE =20V 15V 13V 11V 9V 7V
IC, COLLECTOR CURRENT
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
IC, COLLECTOR CURRENT
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
2.5V
80A
IC =100A
IC, COLLECTOR CURRENT
2.0V IC =50A
60A
1.5V
40A
1.0V
IC =25A
20A
T J = 1 7 5 C 2 5 C
0.5V
0A
0.0V
0V
2V
4V
6V
8V
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.2 Dec-04
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T
t d(off)
t d(off)
t, SWITCHING TIMES
100ns tf
tr
t, SWITCHING TIMES
100ns
tf
t d(on)
tr
10ns
10ns
t d(on)
0A
20A
40A
60A
80A
0
5
10
15
20
25
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 7, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E)
7V
t d(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
6V m ax. 5V 4V 3V 2V 1V 0V -50C m in. typ.
t, SWITCHING TIMES
100ns tf tr
t d(on)
10ns 25C
50C
75C
100C 125C 150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, RG=7, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.8mA)
Power Semiconductors
6
Rev. 2.2 Dec-04
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T
*) Eon and Ets include losses due to diode recovery 8.0mJ Ets*
*) E on a nd E ts include losses 6.0m J d ue to diode re co ve ry E ts *
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
5.0m J 4.0m J 3.0m J 2.0m J 1.0m J 0.0m J E off
6.0mJ Eon*
4.0mJ Eoff 2.0mJ
E on *
0.0mJ 0A 20A 40A 60A 80A
0
10
20
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 7, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E)
*) Eon and Ets include losses due to diode recovery
*) E on and E ts include losses
Ets*
due to diode recovery
E, SWITCHING ENERGY LOSSES
3.0mJ
E, SWITCHING ENERGY LOSSES
4m J
3m J E ts * 2m J
E on *
2.0mJ Eoff
E off 1m J
1.0mJ
Eon*
0.0mJ 25C
50C
75C
100C 125C 150C
0m J 300V
350V
400V
450V
500V
550V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, RG = 7, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 50A, RG = 7, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.2 Dec-04
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T
C iss
VGE, GATE-EMITTER VOLTAGE
1 5V 12 0V 1 0V 4 80 V
1nF
c, CAPACITANCE
C oss 100pF C rss
5V
0V 0nC
1 00n C
2 00n C
3 00 nC
0V
10V
20V
30V
40V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=50 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
12s
IC(sc), short circuit COLLECTOR CURRENT
800A
SHORT CIRCUIT WITHSTAND TIME
700A 600A 500A 400A 300A 200A 100A 0A 12V 14V 16V 18V
10s 8s 6s 4s 2s 0s 10V
tSC,
11V
12V
13V
14V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C)
Power Semiconductors
8
Rev. 2.2 Dec-04
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W
-1
0.2 0.1 0.05
R,(K/W) 0.18355 0.12996 0.09205 0.03736 0.00703
, (s) -2 7.425*10 -3 8.34*10 -4 7.235*10 -4 1.035*10 -5 4.45*10
R2
10 K/W
-2
0.02 0.01
R1
C1= 1/R1
C2=2/R2
single pulse 1s 10s 100s 1ms 10ms 100ms
tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T)
Power Semiconductors
9
Rev. 2.2 Dec-04
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T
TO-220AB
symbol min A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95 Dimensions [mm] max 10.30 15.95 0.86 3.7 3.00 6.80 14.00 4.75 0.65 1.32 min 0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374 [inch] max 0.4055 0.6280 0.0339 0.1457 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72
0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071
TO-263AB (D2Pak)
symbol min A B C D E F G H K L M N P Q R S T U V W X Y Z 9.80 0.70 1.00 1.03 0.65 4.30 1.17 9.05 2.30 0.00 4.20 2.40 0.40 10.80 1.15 6.23 4.60 9.40 16.15 [mm]
dimensions [inch] max 10.20 1.30 1.60 1.07 0.85 4.50 1.37 9.45 2.50 0.20 5.20 3.00 0.60 min 0.3858 0.0276 0.0394 0.0406 0.0256 0.1693 0.0461 0.3563 0.0906 0.0000 0.1654 0.0945 0.0157 max 0.4016 0.0512 0.0630 0.0421 0.0335 0.1772 0.0539 0.3720 0.0984 0.0079 0.2047 0.1181 0.0236
2.54 typ. 5.08 typ.
0.1 typ. 0.2 typ.
15 typ.
0.5906 typ.
8 max
8 max
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
Power Semiconductors
10
Rev. 2.2 Dec-04
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T
TO-247AC
symbol min A B C D E F G H K L M N P Q 6.12 4.78 2.29 1.78 1.09 1.73 2.67 20.80 15.65 5.21 19.81 3.560 3.61 6.22 [mm] max 5.28 2.51 2.29 1.32 2.06 3.18 21.16 16.15 5.72 20.68 4.930 min 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 0.8189 0.6161 0.2051 0.7799 0.1402 0.2409 dimensions [inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252 0.8331 0.6358 0.2252 0.8142 0.1941 0.2449
0.76 max
0.0299 max
0.1421
Power Semiconductors
11
Rev. 2.2 Dec-04
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
12
Rev. 2.2 Dec-04
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.2 Dec-04

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